| PART |
Description |
Maker |
| 1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
| 1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
Micrel Semiconductor, Inc.
|
| NTE916 |
Integrated Circuit High Current, NPN Transistor Array, Common Emitter
|
NTE[NTE Electronics]
|
| TD62504FB TD62503FB E005669 |
From old datasheet system
7CH SINGLE DRIVER :COMMON EMITTER
7CH SINGLE DRIVER : COMMON EMITTER 7通道单一驱动程序：共发射
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| EMA6DXV5T5 |
(EMA6DXV5T1 / EMA6DXV5T5) Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors
|
ON Semiconductor
|
| MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp.
ADPOW
|
| MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 10A030 |
3 W, 20 V, 1000 MHz common emitter transistor
3 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor
1.5 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHZTECH[GHz Technology]
|
| 23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor
0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
